? 2009 ixys corporation, all rights reserved g = gate c = collector e = emitter tab = collector symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 48 a i c100 t c = 100c 24 a i cm t c = 25c, 1ms 115 a i a t c = 25c 20 a e as t c = 25c 250 mj ssoa v ge = 15v, t j = 125c, r g = 5 i cm = 60 a (rbsoa) clamped inductive load @v ce 1200 v p c t c = 25c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces v ge = 0v 100 a t j = 125c 1.5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 24a, v ge = 15v, note 2 3.6 4.2 v t j = 125c 3.2 v features z optimized for low conduction and switching losses z square rbsoa z anti-parallel ultra fast diode z avalanche rated z international standard package advantages z high power density z low gate drive requirement applications z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switch-mode and resonant-mode power supplies ds100123(03/09) genx3 tm 1200v igbt IXGH30N120C3H1 preliminary technical information v ces = 1200v i c100 = 24a v ce(sat) 4.2v t fi(typ) = 42ns high speed pt igbts for 10-50khz switching to-247ad g c e tab
ixys reserves the right to change limits, test conditions, and dimensions. IXGH30N120C3H1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 24a, v ce = 10v, note 2 10 17 s c ies 1810 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 185 pf c res 50 pf q g 80 nc q ge i c = 24a, v ge = 15v, v ce = 0.5 ? v ces 11 nc q gc 37 nc t d(on) 18 ns t ri 33 ns e on 1.45 mj t d(off) 106 ns t fi 42 ns e off 0.47 0.85 mj t d(on) 20 ns t ri 40 ns e on 2.50 mj t d(off) 135 ns t fi 280 ns e off 1.30 2.10 mj r thjc 0.50 c/w r thck 0.21 c/w reverse diode (fred) symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v f i f = 20a, v ge = 0v 3.0 v t j = 125c 2.8 v i rm i f = 20a, -di f /dt = 750a/ s, v r = 800v 19 a t rr v ge = 0v 70 ns r thjc 0.9 c/w inductive load, t j = 25c i c = 24a, v ge = 15v v ce = 600v, r g = 5 note 1 notes: 1. switching times may increase for v ce (clamp) > 0.5 ? v ces , higher t j or increased r g . 2. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-247 (ixgh) ad outline 1 = gate 2 = collector 3 = emitter tab = collector inductive load, t j = 125c i c = 24a, v ge = 15v v ce = 600v, r g = 5 note 1
? 2009 ixys corporation, all rights reserved IXGH30N120C3H1 fig. 1. output characteristics @ 25oc 0 4 8 12 16 20 24 28 32 36 40 44 48 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10121416182022242628 v ce - volts i c - amperes v ge = 15v 9v 11v 13v 7v fig. 3. output characteristics @ 125oc 0 4 8 12 16 20 24 28 32 36 40 44 48 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 48a i c = 24a i c = 12a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 6789101112131415 v ge - volts v ce - volts i c = 48 a t j = 25oc 24 a 12 a fig. 6. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 60 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH30N120C3H1 ixys ref: g_30n120c3h1(4a)03-10-09 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 24 0 5 10 15 20 25 30 35 40 45 50 55 60 65 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 200 400 600 800 1000 1200 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 600v i c = 24a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved IXGH30N120C3H1 fig. 12. inductive switching energy loss vs. gate resistance 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 4 6 8 10 12 14 16 18 20 22 24 26 28 30 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 8 9 10 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 48a i c = 24a fig. 17. inductive turn-off switching times vs. junction temperature 0 50 100 150 200 250 300 350 400 450 500 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 60 70 80 90 100 110 120 130 140 150 160 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 600v i c = 48a i c = 24a fig. 15. inductive turn-off switching times vs. gate resistance 240 260 280 300 320 340 360 380 4 6 8 1012141618202224262830 r g - ohms t f - nanoseconds 50 100 150 200 250 300 350 400 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 48a i c = 24a fig. 13. inductive switching energy loss vs. collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 10 15 20 25 30 35 40 45 50 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 600v i c = 48a i c = 24a fig. 16. inductive turn-off switching times vs. collector current 0 50 100 150 200 250 300 350 400 450 500 10 15 20 25 30 35 40 45 50 i c - amperes t f - nanoseconds 65 80 95 110 125 140 155 170 185 200 215 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH30N120C3H1 ixys ref: g_30n120c3h1(4a)03-10-09 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 10 15 20 25 30 35 40 45 50 i c - amperes t r - nanoseconds 10 13 16 19 22 25 28 31 34 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 600v t j = 125oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 14 16 18 20 22 24 26 28 30 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 600v i c = 24a i c = 48a fig. 18. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 180 200 4 6 8 10 12 14 16 18 20 22 24 26 28 30 r g - ohms t r - nanoseconds 15 20 25 30 35 40 45 50 55 60 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 24a i c = 48a
|
